The principal effect that limits solar cell efficiency is the recombination of the photo generated charge carriers before they participate to energy current. These recombination are characterized by electronic (recombination) and electric interdependent parameters that influence the solar cell quality and conversion efficiency.
In previous works, we have studied the influence of telecommunication (AM radio antenna or a FM radio antenna) source’s power of radiation on a silicon solar cell illuminated by a white light in steady state. We analyzed the effects of electromagnetic field on photo-current density, back surface recombination velocity, intrinsic junction recombination velocity, photo-voltage, maximum electric power and conversion efficiency by making vary the antenna power of radiation.
This article presents a one dimensional study in modeling of the influence of telecommunication source’s power of radiation on silicon solar cell electric parameters (Rs, Rsh, Jp, Vp, Pp, FF, Rpp) using the I-V and P-V .characteristics. After the resolution of magneto transport equations in the base of the silicon solar cell under multispectral
illumination, photo-current density and photo voltage are determined and the I-V and P-V curves are plotted. Two equivalent electric circuits of the solar cell in open and short circuit are proposed allowing us to deduce the shunt and series resistance. Using the I-V and P-V curves we determine the peak photo-current density, the peak photo voltage, the peak electric power, the fill factor and the load resistance at to the peak power point.

Solar cell, lectromagnetic waves, Shunt resistance, Series resistance, Peak power, Fill factor, Load resistance