In this paper, we use the SCAPS-1D software for the numerical simulation of the Cu(In, Ga)Se2 (CIGS) solar cell with a ZnSe-based buffer layer. The study focuses on the influence of the ZnSe buffer layer on the performance of the CIGS solar cell. In this study, the analysis of the effect of the ZnSe buffer layer thickness revealed that optimum performance is obtained with a thickness of 0.020 μm. A study of the ZnSe/CIGS interface showed that optimum performance is obtained for a conduction band offset included between -0.2 eV and 0.2 eV and interface defects of less than . By introducing an electron reflector layer at the absorber/molybdenum interface of this solar cell, it emerges that the performance of the ZnSe/CIGS/Mo solar cell is superior to that of the CdS/CIGS/Mo solar cell.

Numerical simulationSCAPS-1D softwareelectron reflectorZnSe buffer layerZnSe/CIGS interface