The present paper provides a study about the electromagnetic field resistivity of a crystalline silicon photovoltaic (PV) cell. The novelty of this study is found in the identification of a better doping rates range where a crystalline silicon PV cell can resist well against the deterioration of its performances. After the fundamental equations solve, the electrical parameters and individual energetic processes have been analysed. The current decreases weakly from 10^14 cm^ 3
to 10^17 cm^ 3 and the voltage, however, increases strongly into this interval. Beyond 10^17 cm^ 3, the currents gives a strong decrease in contrast the voltage which provides a low increase. That can be explained by a best electromagnetic resistivity found in 10^17 cm^ 3 and it confirms the obtaining of the maximum electric power in this point. Thermalization mechanism does not affected by the electromagnetic field and doping rate. But the analyses of the thermodynamic process behaviour and fill factor on the one hand and on the other hand the behaviour of the
absorption mechanism, it appears that the best resistivity to the electromagnetic field is found in 10^17 cm^ 3. Hence the doping level can be used to improve the electromagnetic resistivity of the PV cell in crystalline silicon.

Crystalline Silicon, PV cell, Absorption process, Thermodynamic process, Fill factor, Electromagnetic resistivity